Part of Springer Nature. We present two examples: narrowband, elliptical micropillars and broadband, elliptical Bragg gratings. Phys Status Solidi B 228:457–460, Laws GM, Larkins EC, Harrison I, Molloy C, Somerford D (2001) Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys.
According to the models, the distribution of the strain field around single dislocation can be obtained [31, 32]. The refractive index of AlN has a direct influence on AlGaN-based deep ultraviolet optoelectronic devices, such as the external quantum efficiency of light-emitting devices. Figure S5. Using an ultra-pure diamond sample, the authors achieve detection of 3 nT magnetic fields at kilohertz frequencies after 100 s of averaging. 1 at.%, after which they are const. c Refractive index vs. different TDDs at 280 nm, 365 nm, and 633 nm. (a) Crystal structure of aluminum nitride. We demonstrate a polarized single-photon efficiency of 0.60 ± 0.02 (0.56 ± 0.02), a single-photon purity of 0.975 ± 0.005 (0.991 ± 0.003) and an indistinguishability of 0.975 ± 0.006 (0.951 ± 0.005) for the micropillar (Bragg grating) device. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China, Jianwei Ben, Xiaojuan Sun, Yuping Jia, Ke Jiang, Zhiming Shi, You Wu, Cuihong Kai, Yong Wang & Dabing Li, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China, Jianwei Ben, Ke Jiang, You Wu, Cuihong Kai, Yong Wang & Dabing Li, Laboratory of Optoelectronic Materials and Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China, You can also search for this author in Revealing the dependence of the refractive index of AlN on the threading dislocations is meaningful since high-density threading dislocations usually exist in AlN. The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using …
Also, the dislocations in semiconductors have great influence on the properties of semiconductors and the performance of devices. b The refractive index curve. Quantum emission from the sample is attributed to point-like defects embedded deep within the band gap of AlN. with a nitrogen-vacancy impurity in diamond at room temp. It can be seen that the refractive index of AlN decreases with the increase of TDDs. APL Photon 1:036101, Davydov SY (2002) Evaluation of physical parameters for the group III nitrates: BN, AlN, GaN, and InN. in diamond and SiC. A higher concn. The photoelastic constants matrix P of wurtzite AlN is shown as expression (4) [29, 30].
by using dynamical decoupling. Find more information on the Altmetric Attention Score and how the score is calculated. Opt. To obviate the influence of the stress in AlN material, Raman spectrum was taken to confirm the stress in AlN and the results are shown in Fig. aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states may be harnessed for the realization of qubits. The authors present the results of room- and low-temp. The cylindrical ring models of the two kinds of dislocation are described in Fig.
The three emitters, C1–C3, studied in this work are labeled. Here, we demonstrate coupling of the zero-phonon line of individual nitrogen vacancies to the modes of microring resonators fabricated in single-crystal diamond. The collection efficiency is calculated to be 5.1% into the first lens, assuming a dipole orientated in the plane and with a refractive index n AlN = 2.15 at 600 nm. The results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing. © 2020 Springer Nature Switzerland AG. have predicted the neutral complex between an aluminum vacancy and oxygen impurity on a neighboring nitrogen site (vAl-1ON)0 has a spin triplet configuration, which is stable in a region when the Fermi level is below midgap. Cite this article. Machine Learning-Enabled Design of Point Defects in 2D Materials for Quantum and Neuromorphic Information Processing.
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